HAT1055RJ
Renesas Technology
Silicon P Channel Power MOS FET Power SwitchingHAT1055R, HAT1055RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0067-0100Z Rev.1.00 Aug.29.2003
Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive app
HAT1055R
Silicon P Channel Power MOS FET Power SwitchingHAT1055R, HAT1055RJ
Silicon P Channel Power MOS FET High Speed Power Switching
REJ03G0067-0100Z Rev.1.00 Aug.29.2003
Features
• • • • Low on-resistance Capable of 4.5 V gate drive High density mounting “J” is for Automotive application High temperature D-S leakage gu
Renesas Technology
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