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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i
HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3
HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features • Capable of -4.5 V gate drive • Low drive current • High density mounting • Low on-resistance R DS(on) = 6.0 mΩ typ (at VGS = -10V) Outline SOP-8 8 5 7 6 5 6
HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003 Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive High density
HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Features • • • • Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4
HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Code "J") • Low on-resistance • Capable of –4.5 V gate drive • High density mounting Outline REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.
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