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HAT1043M 전자부품 데이터시트



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기능 검색 결과



HAT1043M  

Hitachi Semiconductor
Hitachi Semiconductor

HAT1043M

Silicon P Channel Power MOS FET Power Switching

HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5




관련 부품 HAT104 상세설명

HAT1041T  

  
Silicon P Channel Power MOS FET High Speed Power Switching

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i



Renesas Technology
Renesas Technology

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HAT1043  

  
Silicon P Channel Power MOS FET Power Switching

HAT1043M Silicon P Channel Power MOS FET Power Switching ADE-208-754D (Z) 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4 Source 3



Hitachi Semiconductor
Hitachi Semiconductor

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HAT1048R  

  
Silicon P Channel Power MOS FET Power Switching

HAT1048R Silicon P Channel Power MOS FET Power Switching ADE-208-1223A (Z) 2nd. Edition Jan. 2001 Features • Capable of -4.5 V gate drive • Low drive current • High density mounting • Low on-resistance R DS(on) = 6.0 mΩ typ (at VGS = -10V) Outline SOP-8 8 5 7 6 5 6



Renesas Technology
Renesas Technology

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HAT1047R  

  
Silicon P-Channel Power MOS FET

HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.5.00 Aug.27.2003 Features • • • • For Automotive Application (at Type Code "J") Low on-resistance Capable of –4.5 V gate drive High density



Renesas Technology
Renesas Technology

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HAT1044M  

  
Silicon P Channel Power MOS FET Power Switching

HAT1044M Silicon P Channel Power MOS FET Power Switching ADE-208-753C(Z) Preliminary 4th. Edition December 1998 Features • • • • Low on-resistance Low drive current High density mounting 4.5V gate drive device can be driven from 5V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D 2 1 3 G 3 4



Hitachi Semiconductor
Hitachi Semiconductor

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HAT1047RJ  

  
Silicon P-Channel Power MOS FET

HAT1047R, HAT1047RJ Silicon P Channel Power MOS FET High Speed Power Switching Features • For Automotive Application (at Type Code "J") • Low on-resistance • Capable of –4.5 V gate drive • High density mounting Outline REJ03G0074-0500Z (Previous ADE-208-1545D(Z)) Rev.



Renesas
Renesas

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