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Datasheet HAF1002 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | HAF1002 | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. |
 Hitachi Semiconductor |
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| 2 | HAF1002L | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. |
Hitachi Semiconductor |
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| 1 | HAF1002S | Silicon P Channel MOS FET Series Power Switching HAF1002(L), HAF1002(S)
Silicon P Channel MOS FET Series Power Switching
ADE-208-586 (Z) 1st. Edition October 1997 Features
This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. |
Hitachi Semiconductor |
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