H7N1005DL
Silicon N-Channel MOS FETH7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 85 mΩ typ.
• Low drive current • Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
12
Renesas
PDF
H7N1005LD
Silicon N Channel MOS FET High Speed Power SwitchingH7N1005LD, H7N1005LS, H7N1005LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0391-0200 Rev.2.00 Oct 16, 2006
Features
• Low on-resistance RDS (on) = 85 mΩ typ. • Low drive current • Capable of 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A (Pa
Renesas Technology
PDF
H7N1005DS
Silicon N-Channel MOS FETH7N1005DL, H7N1005DS
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 85 mΩ typ.
• Low drive current • Capable of 4.5 V gate drive
Outline
REJ03G1736-0100 Rev.1.00
Sep 19, 2008
RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) )
4
12
Renesas
PDF