H7N0603DS
Renesas Technology
Silicon N Channel MOS FET High Speed Power SwitchingH7N0603DL, H7N0603DS
Silicon N Channel MOS FET High speed power Switching
REJ03G0123-0200 Rev.2.00 Jan.26.2005
Features
• Low on - resistance RDS (on) = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive
Outline
PRSS0004ZD
H7N0603DL
Silicon N Channel MOS FET High Speed Power SwitchingH7N0603DL, H7N0603DS
Silicon N Channel MOS FET High speed power Switching
REJ03G0123-0200 Rev.2.00 Jan.26.2005
Features
• Low on - resistance RDS (on) = 11 mΩ typ. • Low drive current • Capable of 4.5 gate drive
Outline
PRSS0004ZD-B (Previous code: DPAK(L)-2)
D 4
PRSS0
Renesas Technology
PDF