Datasheet H7N0405LD Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H7N0405LD	Silicon N Channel MOS FET High Speed Power Switching H7N0405LD, H7N0405LS, H7N0405LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1367-0100 Rev.1.00 Sep 25, 2006 Features • Low on-resistance RDS(on) = 4.0 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (P	Renesas Technology

H7N040 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H7N0401LD	Silicon N Channel MOS FET High Speed Power Switching H7N0401LD, H7N0401LS, H7N0401LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1129-0500 (Previous: ADE-208-1527C) Rev.5.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 3.1 mΩ typ. • 4.5 V gate drive devices • High Speed Switchin	Renesas Technology
H7N0405LS	Silicon N Channel MOS FET High Speed Power Switching H7N0405LD, H7N0405LS, H7N0405LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1367-0100 Rev.1.00 Sep 25, 2006 Features • Low on-resistance RDS(on) = 4.0 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package c	Renesas Technology
H7N0405LM	Silicon N Channel MOS FET High Speed Power Switching H7N0405LD, H7N0405LS, H7N0405LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1367-0100 Rev.1.00 Sep 25, 2006 Features • Low on-resistance RDS(on) = 4.0 mΩ typ. • Low drive current. • Capable of 4.5 V gate drive Outline RENESAS Package c	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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