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H7N0312LD 전자부품 데이터시트



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H7N0312LD  

Renesas Technology
Renesas Technology

H7N0312LD

Silicon N Channel MOS FET High Speed Power Switching

H7N0312LD, H7N0312LS, H7N0312LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V




관련 부품 H7N0312 상세설명

H7N0312LS  

  
Silicon N Channel MOS FET High Speed Power Switching

H7N0312LD, H7N0312LS, H7N0312LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V



Renesas Technology
Renesas Technology

PDF



H7N0312LM  

  
Silicon N Channel MOS FET High Speed Power Switching

H7N0312LD, H7N0312LS, H7N0312LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V



Renesas Technology
Renesas Technology

PDF



H7N0312AB  

  
Silicon N Channel MOS FET High Speed Power Switching

H7N0312AB Silicon N Channel MOS FET High Speed Power Switching REJ03G1127-0400 (Previous: ADE-208-1571B) Rev.4.00 Sep 07, 2005 Features R • Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENES



Renesas Technology
Renesas Technology

PDF




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