H7N0312LD
Renesas Technology
Silicon N Channel MOS FET High Speed Power SwitchingH7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006
Features
R
• Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V
H7N0312LS
Silicon N Channel MOS FET High Speed Power SwitchingH7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006
Features
R
• Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V
Renesas Technology
PDF
H7N0312LM
Silicon N Channel MOS FET High Speed Power SwitchingH7N0312LD, H7N0312LS, H7N0312LM
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1128-0300 (Previous: ADE-208-1572A) Rev.3.00 Apr 07, 2006
Features
R
• Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V
Renesas Technology
PDF
H7N0312AB
Silicon N Channel MOS FET High Speed Power SwitchingH7N0312AB
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1127-0400 (Previous: ADE-208-1571B) Rev.4.00 Sep 07, 2005
Features
R
• Low on-resistance DS (on) = 2.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENES
Renesas Technology
PDF