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H7N0308LD, H7N0308LS, H7N0308LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1124-0500 (Previous: ADE-208-1535C) Rev.5.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V
H7N0308LD, H7N0308LS, H7N0308LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1124-0500 (Previous: ADE-208-1535C) Rev.5.00 Apr 07, 2006 Features R • Low on-resistance DS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 200
H7N0308AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 3.8 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1122-0400 (P
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