|
|
Datasheet H5N5005PL Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | H5N5005PL | Silicon N-Channel MOS FET H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance: RDS(on) = 0.070 Ω typ. • Low leakage current: IDSS = 10 µA max (at VDS = 500 V) • High speed switching: tf = 300 ns typ (at VGS = 10 V, ID = 30 A, RL = 8.33 Ω) • Low gate charge: Qg = 300 nC ty |
 Renesas |
 |
| 1 | H5N5005PL | Silicon N-Channel MOSFET H5N5005PL
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-1382 (Z) Target Specification 1st. Edition Mar. 2001 Features
• • • • • •
Low on-resistance: R DS(on) = 0.064 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 300 ns typ (at VG |
 Hitachi |
|
| Esta página es del resultado de búsqueda del H5N5005PL. Si pulsa el resultado de búsqueda de H5N5005PL se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |