Datasheet H5N2522LS Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H5N2522LS	Silicon N Channel MOS FET High Speed Power Switching H5N2522LS Silicon N Channel MOS FET High Speed Power Switching REJ03G1667-0100 Rev.1.00 Apr 23, 2008 Features • Low on-resistance • Low leakage current • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(	Renesas Technology

H5N252 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H5N2522LS	Silicon N Channel MOS FET High Speed Power Switching H5N2522LS Silicon N Channel MOS FET High Speed Power Switching REJ03G1667-0100 Rev.1.00 Apr 23, 2008 Features • Low on-resistance • Low leakage current • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004AE-B (	Renesas Technology
H5N2522FP-E0-E	High Speed Power Switching MOS FET H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-	Renesas Technology
H5N2522FN	Silicon N Channel MOS FET High Speed Power Switching H5N2522FN Silicon N Channel MOS FET High Speed Power Switching REJ03G1573-0210 Rev.2.10 May 08, 2007 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) D G 1.	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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