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H5N2515P Silicon N Channel MOS FET High Speed Power Switching REJ03G0413-0100 Rev.1.00 Sep.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta =
H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK
H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current • High Speed Switching • Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Abs
H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain
H5N2512FP-E0-E 250V - 18A - RDS(on) = 0.082 (ID = 9 A, VGS = 10 V, Ta = 25C) RENESAS : PRSS0003AG-A ( : TO-220FP) D 1 23 G S R07DS0861CJ0100 1.00 Oct 30, 2012 1. 2. 3. : 1. PW 10 s, 2. Tc = 25C 3. Tch 150C 1% VDSS VGSS ID ID (pulse) IDR IDR (pu
H5N2514P Silicon N Channel MOS FET High Speed Power Switching REJ03G1203-0100 Rev.1.00 May 25.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3.
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