파트넘버.co.kr H5N2519P 데이터시트 검색

H5N2519P 전자부품 데이터시트



H5N2519P 전자부품 회로 및
기능 검색 결과



H5N2519P  

Renesas Technology
Renesas Technology

H5N2519P

Silicon N Channel MOS FET High Speed Power Switching

H5N2519P Silicon N Channel MOS FET High Speed Power Switching REJ03G0478-0200 Rev.2.00 Nov.19.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S




관련 부품 H5N251 상세설명

H5N2515P  

  
Silicon N Channel MOS FET High Speed Power Switching

H5N2515P Silicon N Channel MOS FET High Speed Power Switching REJ03G0413-0100 Rev.1.00 Sep.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta =



Renesas Technology
Renesas Technology

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H5N2510DL  

  
Silicon N Channel MOS FET High Speed Power Switching

H5N2510DL, H5N2510DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1110-0200 (Previous: ADE-208-1379) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK



Renesas Technology
Renesas Technology

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H5N2512CF  

  
Silicon N Channel MOS FET High Speed Power Switching

H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current • High Speed Switching • Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Abs



Renesas Technology
Renesas Technology

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H5N2513PL  

  
Silicon N Channel MOS FET High Speed Power Switching

H5N2513PL Silicon N Channel MOS FET High Speed Power Switching REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Features • Low on-resistance • High speed switching • Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain



Renesas Technology
Renesas Technology

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H5N2512FP-E0-E  

  
250V - 18A - Field Effect Transistor

H5N2512FP-E0-E 250V - 18A -  RDS(on) = 0.082     (ID = 9 A, VGS = 10 V, Ta = 25C) RENESAS : PRSS0003AG-A ( : TO-220FP) D 1 23 G S R07DS0861CJ0100 1.00 Oct 30, 2012 1. 2. 3. : 1. PW  10 s, 2. Tc = 25C 3. Tch  150C  1% VDSS VGSS ID ID (pulse) IDR IDR (pu



Renesas Technology
Renesas Technology

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H5N2514P  

  
Silicon N Channel MOS FET High Speed Power Switching

H5N2514P Silicon N Channel MOS FET High Speed Power Switching REJ03G1203-0100 Rev.1.00 May 25.2005 Features • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2. Drain (Flange) 3.



Renesas Technology
Renesas Technology

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