Datasheet H5N2502CF Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H5N2502CF	Silicon N Channel MOS FET High Speed Power Switching H5N2502CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0480-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current • High Speed Switching Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C	Renesas Technology

H5N250 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H5N2507P	High Speed Power Switching MOS FET H5N2507P 250V - 50A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.04  typ. (at ID = 25 A, VGS= 10 V, Ta = 25°C)  Low leakage current  High speed switching  Low gate charge  Built-in fast recovery diode Outline RENESAS Package code	Renesas Technology
H5N2508DL	Silicon N Channel MOS FET High Speed Power Switching H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) •	Renesas Technology
H5N2508DS	Silicon N Channel MOS FET High Speed Power Switching H5N2508DL, H5N2508DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1108-0200 (Previous: ADE-208-1377) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.48 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 250 V) •	Renesas Technology

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nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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