Datasheet H5N2005DL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H5N2005DL	Silicon N Channel MOS FET High Speed Power Switching To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations i	Hitachi Semiconductor

H5N200 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H5N2007FN	Silicon N Channel MOS FET High Speed Power Switching H5N2007FN Silicon N Channel MOS FET High Speed Power Switching REJ03G0370-0100Z Rev.1.00 May.28.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-220FN D G 1. Gate 2. Drain 3. Source S 1 2 3 Absolute Maxim	Renesas Technology
H5N2008P	Silicon N Channel MOS FET High Speed Power Switching H5N2008P Silicon N Channel MOS FET High Speed Power Switching REJ03G0390-0300 Rev.3.00 Nov.24.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute M	Renesas Technology
H5N2004DS	Silicon N Channel MOS FET High Speed Power Switching H5N2004DL, H5N2004DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1103-0200 (Previous: ADE-208-1372) Rev.2.00 Sep 07, 2005 Features • Low • Low on-resistance: R DS (on) = 0.38 Ω typ. leakage current: IDSS = 1 µA max (at VDS = 200 V) •	Renesas Technology

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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