H544 전자부품 데이터시트

H5N2803PF Silicon N Channel MOS FET High Speed Power Switching REJ03G0395-0100 Rev.1.00 Aug.05.2004 Features • Low on-resistance • Low leakage current • High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Absolute Maximum Ratings (Ta = 25°C)

H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H5PS5162GFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any respon

256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Oc

H5PS5162GFR Series 512Mb DDR2 SDRAM H5PS5182GFR-xxC H5PS5182GFR-xxI H5PS5182GFR-xxL H5PS5182GFR-xxJ H5PS5162GFR-xxC H5PS5162GFR-xxI H5PS5162GFR-xxL H5PS5162GFR-xxJ This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any respon

256Mb : x32 Dual Die Synchronous DRAM 256M (8Mx32bit) Hynix SDRAM Memory This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 1.0 / Oc

www.DataSheet4U.net HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200520 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H50N03U N-Channel Enhancement-Mode MOSFET (25V, 50A) H50N03U Pin Assignment Tab 3 2 1 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: D