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www.DataSheet4U.net PHASE CONTROL THYRISTOR H445CHXX TJ (0C) Symbol Characteristics Conditions Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM Repetitive Repetitive voltage Repetitive Repetitive peak reverse voltage peak off-stage peak reverse current peak off-state current V = VRRM V = VR
4A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQP4N60C FQPF4N60C 公司型号 H4N60P H4N60F 通俗命名 4N60 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式 条管装 盒装箱装 每管数量 50Pcs 4N60 Series N-Channel MOSFET 每盒数量 每箱数�
4A, 600V, N沟道 场效应晶体管 产品参数规格书 工业型号 FQP4N60C FQPF4N60C 公司型号 H4N60P H4N60F 通俗命名 4N60 H HAOHAI 封装标识 P: TO-220AB F: TO-220FP 包装方式 条管装 盒装箱装 每管数量 50Pcs 4N60 Series N-Channel MOSFET 每盒数量 每箱数�
PHASE CONTROL THYRISTOR H45TBXX Symbol Characteristics Conditions TJ (0C) Value Unit BLOCKING PARAMETERS VRRM VDRM IRRM IDRM dV/dT Repetitive peak reverse voltage Repetitive peak off-stage voltage Repetitive peak reverse current Repetitive peak off-state current Rep. rate of ch
HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H40N03E N-Channel Enhancement-Mode MOSFET (25V, 40A) H40N03E Pin Assignment Tab Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced
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