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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200517 Issued Date : 2005.12.01 Revised Date : 2005.12.16 Page No. : 1/5 H40N03E N-Channel Enhancement-Mode MOSFET (25V, 40A) H40N03E Pin Assignment Tab Features • RDS(on)=16mΩ@VGS=10V, ID=20A • RDS(on)=25mΩ@VGS=4.5V, ID=20A • Advanced
EM MICROELECTRONIC-MARIN SA H4005 ISO 11'784 / 11'785 COMPLIANT READ ONLY CONTACTLESS IDENTIFICATION DEVICE Features • • • • • • • • • • • • 128 bit memory array laser programmable Bit duration : 32 periods of RF field Bit coding according to ISO FDX-B On chip resonnance ca
EM MICROELECTRONIC-MARIN SA H4006 13.56 MHz 64 Data bit Read Only Contactless Identification Device Features n n n n n n n n n n Operating frequency range 10 MHz to 15 MHz RF interface optimized for 13.56 MHz operation Laser programmed memory array (64 data bit + 16 CRC bit) M
® EM MICROELECTRONIC-MARIN SA READ-ONLY CONTACTLESS IDENTIFICATION DEVICE Features 64 bit memory array laser programmable Wide dynamic range due to on chip buffer capacitance & voltage limiter on chip. Full wave rectifier on chip Big modulation depth due to a low impedance mod
IHW40T120 Soft Switching Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • Short circuit withstand time – 10µs Designed for : - Soft Switching Applications - Induction Heating TrenchS
Soft Switching Series IHW40N60T q Low Loss DuoPack : IGBT in TrenchStop® -technology with anti-parallel diode Features: • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C C • Short circuit withstand time – 5µs • TrenchStop® and Fieldstop technology for 600 V ap
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