Datasheet H1N60U Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	H1N60U	N-Channel MOSFET 1.3A, 600V, N沟道场效应晶体管产品参数规格书工业型号公司型号通俗命名 H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI 封装标识 U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 包装方式每管数量每盒数量条管装载带卷盘 80只/管 2.5K/	HAOHAI

H1N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
H1N5819	1.0AMP.SCHOTTKY BARRIER RECTIFIERS HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HL200101 Issued Date : 2000.01.15 Revised Date : 2001.12.06 Page No. : 1/3 H1N5817 thru H1N5819 1.0 AMP. SCHOTTKY BARRIER RECTIFIERS Features • Low Forward Voltage Drop • High Current Capability • High Reliability • High	Hi-Sincerity Mocroelectronics
H1N60D	N-Channel MOSFET 1.3A, 600V, N沟道场效应晶体管产品参数规格书工业型号公司型号通俗命名 H FQU1N60C FQD1N60C H1N60U H1N60D 1N60 HAOHAI 封装标识 U: TO-251 D: TO-252 1N60 Series N-Channel MOSFET 包装方式每管数量每盒数量条管装载带卷�	HAOHAI
H1N4001	General Purpose Rectifiers HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9101-B Issued Date : 1996.03.27 Revised Date : 2000.05.01 Page No. : 1/2 H1N400X Series General Purpose Rectifiers Features • High Reliability • Low Cost • Low Leakage • Low forward voltage drop • High Current Capabil	Hi-Sincerity Mocroelectronics

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Número de pieza	Descripción	Fabricantes	PDF
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