파트넘버.co.kr H11AA814 데이터시트 검색

H11AA814 전자부품 데이터시트



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H11AA814  

QT Optoelectronics
QT Optoelectronics

H11AA814

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototr



H11AA814  

Fairchild Semiconductor
Fairchild Semiconductor

H11AA814

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse par



H11AA814A  

QT Optoelectronics
QT Optoelectronics

H11AA814A

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4–PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES H11A817 SERIES PACKAGE DIMENSIONS DESCRIPTION The QT Optoelectronics H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a single silicon phototr



H11AA814A  

Fairchild Semiconductor
Fairchild Semiconductor

H11AA814A

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4-PIN PHOTOTRANSISTOR OPTOCOUPLERS H11AA814 SERIES PACKAGE H11A617 SERIES H11A817 SERIES H11AA814 SCHEMATIC 1 4 COLLECTOR 4 2 3 EMITTER 1 DESCRIPTION The H11AA814 Series consists of two gallium arsenide infrared emitting diodes, connected in inverse par



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