Datasheet GX3146 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	GX3146	146 x 146 3.5Gb/s Crosspoint Switch GX3146 146 x 146 3.5Gb/s Crosspoint Switch with Trace Equalization and Output De-emphasis Key Features • 146 x 146 crosspoint switch architecture supporting broadcast and multi-cast modes • Supports all data rates up to 3.5Gb/s • Low power consumption: 19.45W typical (all channels active) �	Semtech	data

GX3 Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	GX3146	146 x 146 3.5Gb/s Crosspoint Switch GX3146 146 x 146 3.5Gb/s Crosspoint Switch with Trace Equalization and Output De-emphasis Key Features • 146 x 146 crosspoint switch architecture supporting broadcast and multi-cast modes • Supports all data rates up to 3.5Gb/s • Low power consumption: 19.45W typical (all channels active) �	Semtech	data
2	GX3202	202 x 202 3.5Gb/s Crosspoint Switch GX3202 202 x 202 3.5Gb/s Crosspoint Switch with Trace Equalization and Output De-emphasis Key Features • 202 x 202 crosspoint switch architecture supporting broadcast and multi-cast modes • Supports all data rates up to 3.5Gb/s • Low power consumption: 25W typical (all channels active) • S	Semtech	data
3	GX3290	290 x 290 3.5Gb/s Crosspoint Switch GX3290 290 x 290 3.5Gb/s Crosspoint Switch with Trace Equalization and Output De-emphasis Key Features • 290 x 290 crosspoint switch architecture supporting broadcast and multi-cast modes • Supports all data rates up to 3.5Gb/s • Low power consumption: 34.25W typical (all channels active) �	Semtech	data
4	GX3441	RF POWER GAN TRANSISTOR polyfet rf devices GX3441 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties.	POLYFET RF DEVICES	transistor
5	GX3442	RF POWER GAN TRANSISTOR polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties.	POLYFET RF DEVICES	transistor

Esta página es del resultado de búsqueda del GX3146. Si pulsa el resultado de búsqueda de GX3146 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap