GV3407
Gem micro
P-Channel Enhancement-Mode MOSFETGem micro
semiconductor Inc.
GV3407
P-Channel Enhancement-Mode MOSFET (-30V, -4.3A)
PRODUCT SUMMARY
VDSS
ID
RDS(on) (m-ohm) Max
-30V -4.3A
60 @ VGS = -10 V,ID=-4.3A 78 @ VGS = -4.5V,ID=-3.0A
Features
Super high dense cell trench design for low RD