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Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2623 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 170m -2.0A The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe
Pb Free Plating Product ISSUED DATE :2006/06/13 REVISED DATE : GTT2610 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective
Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2604 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 45m 5.5A The GTT2604 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti
Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2603 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 65m -5.0A The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec
Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2625 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 135m -2.3A The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe
Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2602 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 34m 6.3A The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti
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