파트넘버.co.kr GTT2604 데이터시트 검색

GTT2604 전자부품 데이터시트



GTT2604 전자부품 회로 및
기능 검색 결과



GTT2604  

GTM
GTM

GTT2604

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2604 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 45m 5.5A The GTT2604 utilized advanced processing techniques to achieve the lowest possible on-resistan




관련 부품 GTT26 상세설명

GTT2623  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2623 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 170m -2.0A The GTT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe



GTM
GTM

PDF



GTT2610  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/06/13 REVISED DATE : GTT2610 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A The GTT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective



GTM
GTM

PDF



GTT2605  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2605 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80m -4.0A The GTT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec



GTM
GTM

PDF



GTT2603  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2603 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 65m -5.0A The GTT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effec



GTM
GTM

PDF



GTT2625  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2625 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 135m -2.3A The GTT2625 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effe



GTM
GTM

PDF



GTT2602  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/03/28 REVISED DATE : GTT2602 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 34m 6.3A The GTT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti



GTM
GTM

PDF




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