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GT80J101B 전자부품 데이터시트



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GT80J101B  

Toshiba Semiconductor
Toshiba Semiconductor

GT80J101B

Insulated Gate Bipolar Transistor

GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications • • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A)




관련 부품 GT80J10 상세설명

GT80J101A  

  
Insulated Gate Bipolar Transistor

GT80J101A TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101A High Power Switching Applications Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A) · · · Maximum Ratings (Ta = 25°C) Characteri



Toshiba Semiconductor
Toshiba Semiconductor

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GT80J101  

  
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

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