GT80J101B
Toshiba Semiconductor
Insulated Gate Bipolar TransistorGT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
• • • Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A)
GT80J101A
Insulated Gate Bipolar TransistorGT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
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Maximum Ratings (Ta = 25°C)
Characteri
Toshiba Semiconductor
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