Datasheet GT60N321 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT60N321	High Power Switching Applications The 4th Generation GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (d	Toshiba Semiconductor

GT60N Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT60N321	High Power Switching Applications The 4th Generation GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr	Toshiba Semiconductor
GT60N322	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application GT60N322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N322 Voltage Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.11 μs (typ.) (IC = 60 A) Low saturation voltage : VCE (sat) = 2	Toshiba Semiconductor

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