GT60M323
Toshiba
Silicon N Channel IGBTGT60M323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M323
Voltage Resonance Inverter Switching Application
Unit: mm • • • • • Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (
GT60M322
Silicon N Channel IGBTGT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (
Toshiba
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GT60M324
SILICON N CHANNEL IGBTGT60M324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M324
Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT
Unit: mm
• FRD included between emitter and collector
• Enhancement mode type
• High speed IGBT : tf = 0.11μs (typ
Toshiba
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GT60M303
SILICON N CHANNEL IGBTGT60M303
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT60M303
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.)
FRD : trr = 0.7μs (TYP.) z Low satur
Toshiba Semiconductor
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