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GT60M323 전자부품 데이터시트



GT60M323 전자부품 회로 및
기능 검색 결과



GT60M323  

Toshiba
Toshiba

GT60M323

Silicon N Channel IGBT

GT60M323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M323 Voltage Resonance Inverter Switching Application Unit: mm • • • • • Enhancement mode type High speed : tf = 0.09 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (




관련 부품 GT60M3 상세설명

GT60M302  

  
N CHANNEL MOS TYPE (HIGH POWER SWITCHING APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

PDF



GT60M322  

  
Silicon N Channel IGBT

GT60M322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M322 Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application • • • • • Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE (



Toshiba
Toshiba

PDF



GT60M324  

  
SILICON N CHANNEL IGBT

GT60M324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60M324 Consumer Application Voltage Resonance Inverter Switching Application Sixth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.11μs (typ



Toshiba
Toshiba

PDF



GT60M301  

  
N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

PDF



GT60M303  

  
SILICON N CHANNEL IGBT

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.) FRD : trr = 0.7μs (TYP.) z Low satur



Toshiba Semiconductor
Toshiba Semiconductor

PDF




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