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Datasheet GT60M322 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60M322 | Silicon N Channel IGBT GT60M322
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60M322
Voltage Resonance Inverter Switching Application Current Resonance Inverter Switching Application
• • • • • Enhancement mode type High speed : tf = 0.15 µs (typ.) (IC = 60 A) Low saturation voltage : VCE ( |
Toshiba |
GT60M Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60M303 | SILICON N CHANNEL IGBT |
Toshiba Semiconductor |
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GT60M104 | N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) |
Toshiba Semiconductor |
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GT60M301 | N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS) |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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