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Datasheet GT60J321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT60J321 | The 4th Generation Soft Switching Applications GT60J321
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT60J321
The 4th Generation Soft Switching Applications
Unit: mm
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Enhancement-mode High speed: tf = 0.30 µs (typ.) (IC = 60 A) Low saturation voltage: VCE (sat) = 1.55 V (typ.) (IC = 60 A)
Maximum Ratings (Ta = 25 |
Toshiba |
GT60J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT60J323 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT60J323H | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba |
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GT60J322 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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