Datasheet GT605G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT605G	6 Amp Glass Passivated Quick Connect Rectifier 6 Amp Glass Passivated Quick Connect Rectifier GT605G~ GT610G 6 Amp Glass Passivated Quick Connect Rectifier Features • • • • Package suitable for assembly Glass passivated junction High current capability Plastic package has underwriters laboratory flammability classifi	TAITRON

GT6 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT60N321	High Power Switching Applications The 4th Generation GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · · · · FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) FRD : trr	Toshiba Semiconductor
GT60M303	SILICON N CHANNEL IGBT GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm z Fourth generation IGBT z FRD included between emitter and collector z Enhancement mode type z High speed IGBT : tf = 0.25μs (TYP.) FRD : trr = 0.7μ	Toshiba Semiconductor
GT60M104	N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS)	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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