Datasheet GT5G133 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT5G133	Strobe Flash Applications GT5G133 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G133 Strobe Flash Applications Unit: mm • Enhancement-mode • Low gate drive voltage: • Peak collector current: VGE = 2.5 V (min) (@IC = 130 A) IC = 130 A (max) • Compact and Thin (TSON-8) packag	Toshiba Semiconductor

GT5G Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT5G103	N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)	Toshiba Semiconductor
GT5G102	Insulated Gate Bipolar Transistor GT5G102 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT5G102 Strobe Flash Applications Unit: mm 3rd Generation High input impedance Low saturation voltage : VCE (sat) = 8 V (max) (IC = 130 A) · · Enhancement-mode 12 V gate drive · · · Max	Toshiba Semiconductor
GT5G101	Insulated Gate Bipolar Transistor	Toshiba Semiconductor

Esta página es del resultado de búsqueda del GT5G133. Si pulsa el resultado de búsqueda de GT5G133 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin.

Enlace url :

[1]

nuevas actualizaciones

Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap