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Datasheet GT50N322A Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT50N322A | Insulated Gate Bipolar Transistor GT50N322A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50N322A
Voltage Resonance Inverter Switching Application Fifth Generation IGBT
• • • • FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.10 μs (typ.) (IC = 60 A) FRD : trr = |
Toshiba Semiconductor |
GT50N3 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT50N322A | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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GT50N321 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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GT50N324 | silicon N-channel IGBT |
Toshiba |
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Número de pieza | Descripción | Fabricantes | |
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