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Datasheet GT50J328 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT50J328 | Insulated Gate Bipolar Transistor GT50J328
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J328
Current Resonance Inverter Switching Application Fourth Generation IGBT
• • • Enhancement mode type High speed : tf = 0.1 μs (Typ.) Low saturation voltage : VCE (sat) = 2.0 V (Typ.) Unit: mm
Absolute Maximum |
Toshiba Semiconductor |
GT50J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT50JR22 | Silicon N-Channel IGBT |
Toshiba |
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GT50J101 | TRANSISTOR IGBT |
Toshiba |
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GT50J322 | SILICON N CHANNEL IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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