GT45F123
Toshiba Semiconductor
Insulated Gate Bipolar TransistorGT45F123
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT45F123
For PDP-TV Applications
• • • • • 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP