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Datasheet GT40T301 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40T301 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40T301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40T301
Parallel Resonance Inverter Switching Applications
Unit: mm • • • • FRD included between emitter and collector Enhancement-mode High speed IGBT : tf = 0.25 µs (typ.) (IC = 40 A) FRD : trr = 0.7 µs (typ.) (d |
Toshiba Semiconductor |
GT40T Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40T301 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT40T101 | Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTOR |
Toshiba Semiconductor |
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GT40T302 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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