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GT40Q322 전자부품 데이터시트



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GT40Q322  

Toshiba Semiconductor
Toshiba Semiconductor

GT40Q322

Voltage Resonance Inverter Switching Application

GT40Q322 TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT Preliminary GT40Q322 Unit: mm Voltage Resonance Inverter Switching Application • • • • • Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FR




관련 부품 GT40Q3 상세설명

GT40Q323  

  
Silicon N Channel IGBT / Voltage Resonance Inverter Switching Application

GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application Unit: mm • • • • • Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generat



Toshiba Semiconductor
Toshiba Semiconductor

PDF



GT40Q321  

  
Voltage Resonance Inverter Switching Application

GT40Q321 TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT GT40Q321 Voltage Resonance Inverter Switching Application · · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD includ



Toshiba Semiconductor
Toshiba Semiconductor

PDF




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