GT40Q322
Toshiba Semiconductor
Voltage Resonance Inverter Switching ApplicationGT40Q322
TOSHIBA Insulated Gate bipolar Transistor Silicon N Channel IGBT
Preliminary
GT40Q322
Unit: mm
Voltage Resonance Inverter Switching Application
• • • • • Enhancement-mode High speed : tf = 0.14 µs (typ.) (IC = 40A) FR
GT40Q323
Silicon N Channel IGBT / Voltage Resonance Inverter Switching ApplicationGT40Q323
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT40Q323
Voltage Resonance Inverter Switching Application
Unit: mm
• • • • •
Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generat
Toshiba Semiconductor
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GT40Q321
Voltage Resonance Inverter Switching ApplicationGT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD includ
Toshiba Semiconductor
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