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Datasheet GT40Q321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT40Q321 | Voltage Resonance Inverter Switching Application GT40Q321
TOSHIBA Injection Enhanced Gate Transistor Silicon N Channel IEGT
GT40Q321
Voltage Resonance Inverter Switching Application
· · · · · The 5th generation Enhancement-mode High speed : tf = 0.41 µs (typ.) (IC = 40A) Low saturation voltage: VCE (sat) = 2.8 V (typ.) (IC = 40A) FRD includ |
Toshiba Semiconductor |
GT40Q Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT40Q322 | Voltage Resonance Inverter Switching Application |
Toshiba Semiconductor |
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GT40QR21 | Silicon N-Channel IGBT |
Toshiba |
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GT40Q321 | Voltage Resonance Inverter Switching Application |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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