GT40M301
Toshiba Semiconductor
Silicon N Channel MOS Type INSULATED GATE BIPOLAR TRANSISTORGT40M301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL MOS TYPE
GT40M301
HIGH POWER SWITCHING APPLICATIONS
Unit: mm
l The 3rd Generation
l FRD Included Between Emitter and Collector
l Enhancement−Mode
l High Speed IGBT : tf = 0.25µs (TYP.)