Datasheet GT40J321 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GT40J321	Insulated Gate Bipolar Transistor GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application • • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) =	Toshiba Semiconductor

GT40J Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GT40J121	Discrete IGBTs GT40J121 Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications • • Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications The product(s) described herein should not be used for any othe	Toshiba
GT40J322	Insulated Gate Bipolar Transistor GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application • • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation v	Toshiba Semiconductor
GT40J321	Insulated Gate Bipolar Transistor GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application • • • • FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation v	Toshiba Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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