파트넘버.co.kr GT2625 데이터시트 검색

GT2625 전자부품 데이터시트



GT2625 전자부품 회로 및
기능 검색 결과



GT2625  

GTM
GTM

GT2625

P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2625 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 135m -2.3A The GT2625 utilized advanced processing techniques to achieve the lowest possible on-resista




관련 부품 GT26 상세설명

GT2623  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/05/06 REVISED DATE : GT2623 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 170m -2.0A The GT2623 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effect



GTM
GTM

PDF



GT2610  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/06/13 REVISED DATE : GT2610 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 60V 90m 3A Description The GT2610 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cos



GTM
GTM

PDF



GT2605  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2605 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 80m -4.0A The GT2605 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti



GTM
GTM

PDF



GT2603  

  
P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/04/26 REVISED DATE : GT2603 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -20V 65m -5.0A The GT2603 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effecti



GTM
GTM

PDF



GT2602  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/05/06 REVISED DATE : GT2602 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 20V 34m 6.3A The GT2602 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective



GTM
GTM

PDF



GT2604  

  
N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2005/05/18 REVISED DATE : GT2604 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 30V 45m 5.5A The GT2604 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effective



GTM
GTM

PDF




  [1] 




사이트 맵

0    1    2    3    4    5    6    7    8    9    A    B    C    

D    E    F    G    H    I    J    K    L    M    N    O

    P    Q    R    S    T    U    V    W    X    Y    Z


PartNumber.co.kr   |  2020    |  연락처