GT25Q301
Toshiba Semiconductor
N CHANNEL IGBT(HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)GT25Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT25Q301
High Power Switching Applications Motor Control Applications
· · · · · The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat