파트넘버.co.kr GT2531 데이터시트 검색

GT2531 전자부품 데이터시트



GT2531 전자부품 회로 및
기능 검색 결과



GT2531  

GTM
GTM

GT2531

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : GT2531 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description N-CH BVDSS 16V N-CH RDS(ON) 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A The GT2531 uti




관련 부품 GT25 상세설명

GT25J102  

  
N CHANNEL (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

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GT2530  

  
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A The GT2530 utilized advanced processing techniques to



GTM
GTM

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GT25G102SM  

  
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

PDF



GT25G101SM  

  
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

PDF



GT25G102  

  
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)



Toshiba Semiconductor
Toshiba Semiconductor

PDF



GT25G101  

  
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT GT25G101 STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emit



Toshiba Semiconductor
Toshiba Semiconductor

PDF




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