GT2531
GTM
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/01/23 REVISED DATE :
GT2531
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BVDSS 16V N-CH RDS(ON) 58m N-CH ID 3.5A P-CH BVDSS -16V N-CH RDS(ON) 125m N-CH ID -2.5A
The GT2531 uti
GT2530
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Pb Free Plating Product
ISSUED DATE :2006/01/23 REVISED DATE :
GT2530
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.3A
The GT2530 utilized advanced processing techniques to
GTM
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GT25G101
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)GT25G101
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT
GT25G101
STROBE FLASH APPLICATIONS
l High Input Impedance l Low Saturation Voltage l Enhancement−Mode l 20V Gate Drive : VCE (sat)=8V (Max.) (IC=170A) Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector−Emit
Toshiba Semiconductor
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