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Datasheet GT20J101 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT20J101 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT20J101
Preliminary
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT20J101
High Power Switching Applications
Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.30 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max)
Maximum Ratings (Ta = 25° |
Toshiba Semiconductor |
GT20J Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT20J101 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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GT20J341 | Discrete IGBTs Silicon N-Channel IGBT |
Toshiba |
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GT20J301 | N CHANNEL (HIGH POWER SWITCHING/ MOTOR CONTROL APPLICATIONS) |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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