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Datasheet GT15M321 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GT15M321 | Insulated Gate Bipolar Transistor GT15M321
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT15M321
HIGH POWER SWITCHING APPLICATIONS
l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed l Low Saturation Voltage : tf = 0.20 µs (TYP.) (IC = 15 A) : VCE (sat) = 1.8V (TY |
Toshiba Semiconductor |
GT15M Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GT15M321 | Insulated Gate Bipolar Transistor |
Toshiba Semiconductor |
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Número de pieza | Descripción | Fabricantes | |
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