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GT10G101 東芝伝導度変調形電界効果トランジスタ シリコンチャネル IGBT GT10G101 ○ 直列式自動調光ストロボ用 取扱いが簡単なエンハンスメントタイプです。 飽和電圧が低い。 ゲート駆動電圧が低い。 : VCE (sat) = 8V (最大) (IC =
www.partnumber.co.kr GT100NA120UX Vishay Semiconductors "High Side Chopper" IGBT SOT-227 (Trench IGBT), 100 A FEATURES • Trench IGBT technology • Very low VCE(on) • Square RBSOA • HEXFRED® clamping diode • 10 μs short circuit capability SOT-227 • Fully isolated package • Speed 4 kH
GT10Q101 Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10Q101 High Power Switching Applications Unit: mm • • • • The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage: VCE (sat) = 2.7 V (max) Maximum Ratings (Ta = 25°
Interface Portions and In-line Portions of the Various Units and Devices GT10 Series — Subminiature ECU Interface Connectors — <2 mm Pitch> Features Subminiature: with respect to existing 040 connectors. Front retainer design prevents incomplete insertion. 2003.7 F Connectors Center Terminal
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