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GS66502B, GS66504B 650V enhancement mode GaN transistors PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Zero reverse recovery loss – R
GS66502B, GS66504B 650V enhancement mode GaN transistors PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Zero reverse recovery loss – R
GS66506T Top cooled 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Top cooled configuration – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Integral source sense – Dua
GS66508P 650V enhancement mode GaN transistor PRELIMINARY DATASHEET Features – 650V enhancement mode power switch – Ultra low FOM Island Technology™ die – Low inductance GaNPX™ package – Reverse current capability – Zero reverse recovery charge – Source-sense for optimal high speed
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