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Datasheet GP801DDS18 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | GP801DDS18 | Dual Switch Low VCE(SAT) IGBT Module GP801DDS18
GP801DDS18
Dual Switch Low VCE(SAT) IGBT Module
Replaces January 2000 version, DS235-3.0 DS5235-4.1 January 2001
FEATURES
s s s s s
Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 800A Per Arm
KEY PARAMETERS VCES (typ) VCE(sat) (ma |
Dynex Semiconductor |
GP801DD Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
GP801DDS18 | Dual Switch Low VCE(SAT) IGBT Module |
Dynex Semiconductor |
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GP801DDM18 | Hi-Reliability Dual Switch Low VCESAT IGBT Module |
Dynex Semiconductor |
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