Datasheet GP800DDS18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP800DDS18	Dual Switch IGBT Module GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 DS5165-5.0 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Arm KEY PARAMETERS VCES (typ	Dynex Semiconductor

GP800DD Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP800DDS18	Dual Switch IGBT Module GP800DDS18 GP800DDS18 Dual Switch IGBT Module Replaces October 2000 version, DS5165-4.2 DS5165-5.0 January 2001 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate With Al2O3 Substrate Low Inductance Internal Construction Full 1800V Rating 800A Per Arm KEY	Dynex Semiconductor
GP800DDS12	Powerline N-Channel Dual Switch IGBT Module GP800DDS12 GP800DDS12 Powerline N-Channel Dual Switch IGBT Module Replaces October 1999 version, DS5172-3.0 DS5172-4.0 January 2000 The GP800DDS12 is a dual switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low power l	Dynex Semiconductor
GP800DDM18	Hi-Reliability Dual Switch IGBT Module Advance Information GP800DDM18 GP800DDM18 Hi-Reliability Dual Switch IGBT Module Advance Information Replaces October 2000 version, DS5364-2.0 DS5364-3.0 January 2001 FEATURES s s s s High Thermal Cycling Capability 800A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates	Dynex Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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