Datasheet GP400LSS18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP400LSS18	Single Switch IGBT Module GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 800A APPLICATIONS s s s s	Dynex Semiconductor

GP400LS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP400LSS18	Single Switch IGBT Module GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 400A 800A A	Dynex Semiconductor
GP400LSS12	Single Switch IGBT Module GP400LSS12 GP400LSS12 Single Switch IGBT Module Replaces February 2000 version, DS5306-1.2 DS5306-2.3 November 2000 FEATURES s s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200V Rating 400A Per Module KEY PARAMETERS VCES (ty	Dynex Semiconductor

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