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GP2400ESM12 전자부품 데이터시트



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GP2400ESM12  

Dynex Semiconductor
Dynex Semiconductor

GP2400ESM12

Powerline N-Channel Single Switch IGBT Module Preliminary Information

GP2400ESM12 GP2400ESM12 Powerline N-Channel Single Switch IGBT Module Preliminary Information DS5360-1.1 May 2000 The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low po




관련 부품 GP2400ESM 상세설명

GP2400ESM18  

  
Hi-Reliability Single Switch IGBT Module

GP2400ESM18 GP2400ESM18 Hi-Reliability Single Switch IGBT Module DS5406-1.1 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 2400A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 2400A 48



Dynex Semiconductor
Dynex Semiconductor

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