GP2400ESM12
Dynex Semiconductor
Powerline N-Channel Single Switch IGBT Module Preliminary InformationGP2400ESM12
GP2400ESM12
Powerline N-Channel Single Switch IGBT Module Preliminary Information
DS5360-1.1 May 2000
The GP2400ESM12 is a single switch 1200V, robust n channel enhancement mode insulated gate bipolar transistor (IGBT) module. Designed for low po
GP2400ESM18
Hi-Reliability Single Switch IGBT ModuleGP2400ESM18
GP2400ESM18
Hi-Reliability Single Switch IGBT Module
DS5406-1.1 January 2001
FEATURES
s s s s
High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 2400A Per Module
KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)
1800V 3.5V 2400A 48
Dynex Semiconductor
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