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GP200MHS18 전자부품 데이터시트



GP200MHS18 전자부품 회로 및
기능 검색 결과



GP200MHS18  

Dynex Semiconductor
Dynex Semiconductor

GP200MHS18

Half Bridge IGBT Module

GP200MHS18 GP200MHS18 Half Bridge IGBT Module DS5304-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5




관련 부품 GP200MHS 상세설명

GP200MHS12  

  
Half Bridge IGBT Module

GP200MHS12 GP200MHS12 Half Bridge IGBT Module Replaces GP200MHB12S January 1999 version, DS4339-5.5 DS5296-1.5 November 2000 FEATURES s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1200V 2.7



Dynex Semiconductor
Dynex Semiconductor

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