Datasheet GP1200FSS18 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	GP1200FSS18	Single Switch IGBT Module GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)	Dynex Semiconductor

GP1200FS Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
GP1200FSS18	Single Switch IGBT Module GP1200FSS18 GP1200FSS18 Single Switch IGBT Module Replaces February 2000 version, DS5260-2.0 DS5260-3.1 January 2001 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (	Dynex Semiconductor
GP1200FSM18	Hi-Reliability Single Switch IGBT Module GP1200FSM18 GP1200FSM18 Hi-Reliability Single Switch IGBT Module DS5410-1.2 January 2001 FEATURES s s s s High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates 1200A Per Module KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK)	Dynex Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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